6 results
Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor
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- Journal:
- MRS Advances / Volume 2 / Issue 5 / 2017
- Published online by Cambridge University Press:
- 13 February 2017, pp. 329-334
- Print publication:
- 2017
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Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor
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- Journal:
- Journal of Materials Research / Volume 30 / Issue 19 / 14 October 2015
- Published online by Cambridge University Press:
- 07 August 2015, pp. 2846-2858
- Print publication:
- 14 October 2015
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Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 18 December 2014, mrsf14-1736-t01-08
- Print publication:
- 2014
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Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane
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- Journal:
- Journal of Materials Research / Volume 14 / Issue 8 / August 1999
- Published online by Cambridge University Press:
- 31 January 2011, pp. 3397-3409
- Print publication:
- August 1999
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Heterogeneous Kinetics of The Chemical Vapor Deposition of Silicon Carbide From Methyltrichlorosilane
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 111
- Print publication:
- 1993
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Kinetic Modelling of the Deposition of SiC from Methyltrichlorosilane
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- Journal:
- MRS Online Proceedings Library Archive / Volume 250 / 1991
- Published online by Cambridge University Press:
- 15 February 2011, 35
- Print publication:
- 1991
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