We present a simple and reproducible method to obtain TiO2 and Fe2O3 mixed-oxide thin films by reactive radio-frequency sputtering. The influence of iron concentration on the structural properties of the layers has been studied. Structural characterization, carried out by electron microscopy analysis, allowed one to correlate the inhibition of the grain growth of titania to the presence of iron oxide and to its segregation at grain boundaries. This behavior should be ascribed to a superficial-tension phenomenon. As a possible application of these thin films, we have investigated the gas-sensing properties toward CO, with particular focus on the role of Fe. The layers were capable to sense CO down to the level requested for environmental monitoring.

We experimentally demonstrate that porous silicon optical microcavities can be effectively used as multi-parametric gas sensors. As known, the photoluminescence intensity and electrical conduction of porous silicon are strongly dependent on environmental properties, such as the dipole moment of molecules of surrounding gases. The sensitivity is large due to the large surface/volume ratio of porous silicon. While these effects can be observed in any porous silicon structure, microcavities of porous silicon allow an additional sensing parameter, i.e. the spectral position of the resonance cavity peak. The position of the peak depends on the index of refraction of the environment, and gives independent additional information. Moreover, we show that the dynamic response of the peak shift is much faster comparing the other sensing parameters. The combined effects on the peak position, luminescence intensity and electrical conduction can allow discrimination between different substances, and therefore porous silicon optical microcavities can work as multi-parametric optical/electrical sensors. We report detection of 1 ppm of NO2 and 500 ppm of ethanol at room temperature. With NO2, the electrical conduction increases and PL quenches, but the peak does not shift, whereas the peak shifts with ethanol (no significant PL quenching is observed at 500 ppm). This suggests that discrimination between different species can be achieved.

The kinetics of phase transitions and phase segregation induced by annealing temperature on the Ti–W–O gas-sensing layer was studied by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The main goal was to identify, on the basis of kinetics studies, structurally stable Ti–WO3 thin film phases and compare their response to polluting gases in order to determine possible correlations between structural and electrical properties of the sensing layers.

Structural studies have been carried out on SnO2 multilayer thin film grown by the Rheotaxial Growth and Thermal Oxidation method on A120 3 substrates. A preliminary analysis of the X-ray diffraction patterns shows that, in addition to the Sn0 2 cassiterite phase, a strong contribution from an orthorhombic Sn02 phase is present.

In the case of the 3-layer film, the orthorhombic phase is structurally and microstructurally stable after an annealing up to 32 h at 400 'C. The cation coordination is similar to that found in cassiterite, but the chains of edge-sharing [SnO6]8- octahedra run in a zig-zag fashion along the [100] direction, each straight unit containing four octahedra. The relationship between the two phases is discussed on the basis of structural simulations including twinning planes in the crystal structure.

Rheotaxial growth and thermal oxidation (RGTO) for depositing thin films is a recognized technique in preparing gas sensitive semiconducting oxides. This paper presents a study performed by x-ray diffraction and scanning Auger microscopy of the mechanisms of growth and formation of the thin films of the new ternary compound Sn1−xFexOy with an iron content in the range O < x < 25 at. %. A structural model of this compound, which is found to be stable over a very large range of Sn/Fe ratios, can be derived by partially substituting Fe3+ ions in Sn4+ sites. This is an easy substitution in view of the similar values shown by the ionic radii (Fe3+ = 0.64 Å, Sn4+ = 0.71 Å) and the Pauling electronegativity (Fe3+ = 1.8, Sn4+ = 1.8) of these two ions. Experimental data, showing that this material is an excellent CO sensor, are reported.

(111) uniquely oriented large crystalline grain Al thin films have been grown on amorphous substrates such as glass or fused quartz. Al has been evaporated by means of an electron beam in a vacuum of 10-7 mbar which was obtained by a conventional oil diffusion pump in conjunction with a titanium sublimation pump and a series of shields cooled at the liquid nitrogen temperature. By studying the variation of the grain size as a function of the growth temperature, a large increase in the grain size has been found at a substrate temperature 100°C below the Al melting point. This has been interpreted as due to the beginning of the metal surface melting and, as a consequence, to the quasi rheotaxial growth of the metal on itself. When the growth has been carried out at a substrate temperature close to the Al melting point (625°C), the grain size has been found out to increase exponentially as a function of the film thickness with a slope which slows down at a thickness of about 1 pm. (111) oriented columnar grains with a size of 50 – 100 pm, hitherto unreported, have been obtained on glass substrates kept at a maximum temperature of 655 °C. The surface morphology of the Al films has been studied by SEM microscopy while the film structural properties have been studied by an X-ray powder-diffracto-meter and by computer - controlled pole figure goniometer.