Results of a study on internal stress, hardness and structure of nitrogen doped amorphous hydrogenated hard carbon films deposited by r.f. glow discharge on silicon are presented. Films obtained for different bias voltage (Vb), N2 partial pressure and total gas pressure were characterized by Nuclear Reaction (NR), Elastic Recoil Detection (ERD), Rutherford Back-Scattering (RBS), Infrared Spectroscopy (IR) and Raman Scattering. The elemental composition, density and structure are correlated with Vickers hardness, and internal stress values obtained by the substrate bending method. It has been observed that internal stress considerably decreases with increasing nitrogen content, contrary to the behavior shown by hardness, structure and hydrogen concentration, which remain unchanged.