Diborane and hydrogen ions were co-implanted into silicon using an
implanter without an ion analyzer. The samples were annealed at
1000 °C for 30 min in argon atmosphere. Regions containing
carriers became narrower with an increasing fraction of H2 gas in the
gas: for example, carriers were limited only in a narrow region from the
m on silicon implanted with a mixed gas of
57% H2–43% B2H6. The width of the region containing carriers
was approximately double that (
m) on B-implanted silicon.
On the other hand, the width of the region containing B atoms on the H2
and B2H6 co-implanted silicon were slightly narrower than that on
B-implanted silicon. The region containing inactivated B atoms had a
large number of defects and small crystallites.