The continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact doping profiles. As a result, the impurity profiles have a larger dependence on the ion implant parameters, and more attention must be given to minimizing channeling, which results in deeper implanted profiles. Thus, there is a need for a detailed understanding of the dependence of the implanted profile on the key implant parameters. Since such an understanding does not exist for phosphorus implants in silicon, a detailed study has been performed by obtaining experimental phosphorus impurity profiles for a wide range of implant energies (15 - 180 keV), doses (lx1013- 8×1015 cm–2), tilt angles (0° - 10°), and rotation angles (0° - 360°). Channeling along the <100 axial channel dominates the variations. (110) planar channeling is the next most important channeling effect, appearing at higher (5°) tilt angles, where <100 axial channeling is suppressed. (100) planar channeling is not observed at the lower energies but does manifest itself for energies of 80keV and greater. Dose dependencies play a large role beginning around lxlO14 cm-2.