Dielectrics are electrical insulator materials, polarizable by opposite displacement of positive and negative ionized atoms via electric fields across the material’s thickness. Dielectrics are used in energy-storage capacitors, as key components in modern micro-/nanoelectronics, high-frequency and mobile communication devices, and life-saving microchips and other devices such as defibrillators and pacemakers implantable in humans. A key dielectric parameter is the dielectric constant (k), which largely controls the capacitance in capacitors with nanoscale area and dielectric layer thickness. Extremely high dielectric constants (k ≥1000) were observed in oxides (e.g., La1.8Sr0.12NiO4) with relaxor/ferroelectric materials and in combined semiconducting bulk properties with highly resistive grain boundaries. Giant dielectric constant films have also been demonstrated, based on integrating relatively low-dielectric-constant oxides into nanolaminate structures (e.g., TiOx/Al2O3; TiO2/HfO2) with tailored sublayer thicknesses, interfaces, and oxygen atom distributions. This overview article addresses the science and technology of high-dielectric-constant oxide materials with different compositions and structures.

A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm−3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10−14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.

Pt-SiO2 granular metal films were produced by RF diode sputtering and characterized as thermistors for cryogenic temperature measurements at high magnetic fields. The devices were found to have high sensitivity and small magnetoresistance. This, together with ease of fabrication and stability, makes such thermistor useful candidates for cryogenic thermometry.