A 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic free layer and toggle switching mode is presented. The new free layer uses a balanced synthetic-antiferromagnet trilayer structure and a novel write pulse sequence to provide robust switching performance with immunity from ½-select disturbs. This new mode greatly improves the switching performance of the MRAM as compared to conventional MRAM. The intrinsic reliability of the magnetoresistive tunnel junction (MTJ) and the metal interconnect system of MRAM are two other areas of great interest due to the new materials involved. Time dependent dielectric breakdown (TDDB) and resistance drift were the two main failure mechanisms identified for intrinsic memory bit reliability. Results indicated that a lifetime over 10 years is achievable under the operating conditions. Finally data retention is demonstrated over times that are orders of magnitude longer than 10 years.