X-ray powder diffraction studies were performed with propyl-, dodecyl-, and dodecyldiam-monium bentonites saturated with aqueous mixtures of eleven organic pollutants at concentrations of 0.01 to 100%. The alkylammonium salt treatment separated the montmorillonite unit layers, which increased the interlamellar volume and exposed the interlamellar surfaces for adsorption of the organic pollutants. Washing the salt-treated clays with distilled water removed excess, physically adsorbed alkylammonium ions that could interfere with adsorption of the organic pollutants. Adsorption isotherms conducted at organic pollutant concentrations of 100 and 1000 mg/liter indicated the three alkylammonium montmorillonites, especially propylammonium montmorillonite, were effective adsorbents from aqueous solution, but to a lesser extent than adsorbents currently used in the water and wastewater fields.

The scaling of BEOL interconnect technology in ULSI circuitry requires the integration of Cu wiring with ultra-low K (ULK) dielectrics. We present the results of a study of the interaction between different-stoichiometry Ta(N)/Cu barrier processes and porous ULK dielectrics (k=2.4) at 32nm groundrules Auger and diffraction analysis of blanket wafers was used to benchmark two different stoichiometries of TaN barrier deposited using commercially-available ionized PVD sources. Comparison TEM and EDX/EELS images indicates that barrier oxidation is occurring in the low nitrogen-content Ta(N) barrier, which is absent at the higher stoichiometry. These differences are further manifested in defect-density analysis of patterned wafers comparing the two processes. These results illustrate the critical importance the TaN barrier properties play in enabling the integration of Cu/ULK interconnects at 32nm at beyond.