10 results
Room Temperature Boron Diffusion in Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 912 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0912-C02-01
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- 2006
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Lattice strain and composition of Boron-Interstitial Clusters in Crystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C7.2
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- 2004
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Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.4
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- 2002
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Self-Interstitials and Substitutional C in Silicon: Interstitial- Trapping and C– Clustering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.5
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- 2002
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Modeling of Self-Interstitial Diffusion in Implanted Molecular Beam Epitaxy Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C5.6
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- 2002
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Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J6.8
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- 2001
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Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J6.7
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- 2001
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The Source of Transient Enhanced Diffusion in Sub-keV Implanted Boron in Crystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B5.2
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- 2000
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Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 43
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- 1999
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Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 193
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- 1999
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