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As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 157 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 751
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- 1989
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Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 74 / 1986
- Published online by Cambridge University Press:
- 28 February 2011, 505
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- 1986
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Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI
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- Journal:
- MRS Online Proceedings Library Archive / Volume 45 / 1985
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- 25 February 2011, 97
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- 1985
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Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices
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- MRS Online Proceedings Library Archive / Volume 45 / 1985
- Published online by Cambridge University Press:
- 25 February 2011, 183
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- 1985
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A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 45 / 1985
- Published online by Cambridge University Press:
- 25 February 2011, 177
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- 1985
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