We have investigated the flat-band voltage (VFB) shifts of tantalum nitride gate MOS capacitors prepared by two methods. One is CVD-tantalum nitride (CVD-TaN) deposited by the chemical vapor deposition technique using Ta[NC(CH3)2C2H5][N(CH3)2]3 as a precursor, and the other one is sputtered tantalum nitride (sp-TaN) electrodes deposited by reactive DC magnetron sputtering. In the case of the CVD-TaN electrodes, the effective work function estimated from the relationship between VFB and the equivalent oxide thickness (EOT) of the MOS capacitors was about 4.4eV after post metallization annealing (PMA) at 400°C, and shifted to the mid-gap after PMA at 950°C. Moreover, the VFB values of MOS capacitors with sp-TaN electrodes also showed the same behavior after PMA. This shift is mainly dependent on the PMA temperature, regardless of the deposition method used. Similar VFB shifts induced by PMA were also observed in sp-TaN/ Al2O3/ SiO2/ p-Si and sp-TaN/ TaO
/ SiO2/ p-Si capacitors. However, in the case of the sp-TaN/ TaO
/ SiO2/ p-Si capacitors, the V
shift was also observed when the PDA temperature after the TaO
deposition was 800°C and the PMA temperature after the TaN deposition was only 400°C. These results strongly suggest that this VFB shift caused by the PMA originates from a thin interfacial oxide layer between the TaN gate electrode and the dielectrics. Therefore, the maximum processing temperature after gate electrode deposition is important in order to control the threshold voltage of tantalum nitride gate MOSFETs.