Low thermal budget annealing approaches, such as millisecond annealing or solid-phase epitaxy (SPE) of amorphized silicon, electrically activate implanted dopants while minimizing diffusion. However, it is also important to anneal damage to the crystal lattice in order to minimize junction leakage. Annealing experiments were performed on low-energy B implants into both crystalline silicon and into wafers pre-amorphized by Ge implantation. Some wafers also received As implants for halo-style doping, and in some cases the halo implants were pre-annealed at 1050°C before the B-doping. The B-implants were annealed by either SPE at 650°C, spike annealing at 1050°C, or by millisecond annealing with flash-assisted RTP™ (fRTP™) at temperatures between 1250°C and 1350°C. Residual damage was characterized by photoluminescence and non-contact junction leakage current measurements, which permit rapid assessment of damage removal efficacy. Damage from the heavy ions used for the halo and pre-amorphization implants dominates the defect annealing behaviour. The halo doping is the critical factor in determining junction leakage current. Millisecond annealing at high temperatures helps to minimize residual damage while limiting diffusion.