This work attempts to optimize past research results on lead zirconate titanate (PZT) using the fabrication processes at the U.S. Army Research Laboratory so as to achieve a high degree of {001} texture and improved piezoelectric properties. A comparative study was performed between Ti/Pt and TiO2/Pt bottom electrodes. The results indicate that the use of a highly oriented {100} rutile phase TiO2 led to highly textured {111} Pt which in turn improved both the PTO and PZT orientations. PZT (52/48) and (45/55) thin films with and without PTO seed layers were deposited and examined via x-ray diffraction (XRD) methods as a function of annealing temperature. The seed layer provides significant improvement in the {100} orientation generally, and in the {001} subset of planes specifically, while suppressing the {111} orientation of the PZT. Improvements in the Lotgering factor (f) were observed from an existing Ti/Pt/PZT process (f = 0.66) to samples using the PTO seed layer deposited onto the improved Pt electrodes, TiO2/Pt/PTO/PZT (f = 0.96).

The crystallographic texture of lead zirconate titanate (PZT) thin films strongly influences the piezoelectric properties used in MEMS applications. For PZT films poled to saturation, the piezoelectric response is sequentially greater for random, {111}, and {001} texture. Textured growth can be achieved by relying on crystal growth habit and can also be initiated by the use of a seed layer that provides a heteroepitaxial template. Template choice and the process used to form it determine the structural quality and ultimately influence performance and reliability of MEMS PZT devices such as switches, filters, and actuators. This study focuses on how {111}-textured PZT is generated by a combination of crystal habit and templating mechanisms that occur in the PZT/bottom-electrode stack. The sequence begins with {0001}-textured Ti deposited on thermally grown SiO2 on a Si wafer. The Ti is converted to {100}-textured TiO2 (rutile) through thermal oxidation. Then {111}-textured Pt can be grown to act as a template for {111}-textured PZT. The Ti and Pt are deposited by DC magnetron sputtering. The TiO2 and Pt film textures and structure were optimized by variation of sputtering deposition times, temperatures and power levels, and post-deposition anneal conditions. The relationship between Ti, TiO2, and Pt texture and their impact on PZT growth will be presented.

The dc and microwave responses of the BaxSr1-x (X,Y)yTi1-yO3 family of ferroelectric compounds with various substitutional additives X3+, Y5+ are analyzed by combining the random-field technique with the mean-field (Landau-Devonshire) theory of ferroelectricity, along with a self-consistent computation of the dielectric constant of the host material in the presence of the impurity fields. The fields in the material are assumed to arise from charge compensation at the Ti4+ sites, leading to permanent dipoles made up of the resulting positive and negative ions separated by a few lattice constants. It is shown that whereas completely random placement of positive and negative ions generates a Holtsmark distribution of electric field, with infinite second moment and hence extremely large fluctuations in field strength, the association of ionized impurities into permanent dipoles leads to much lower fluctuations in field and a distribution with finite second moment, which makes a self-consistent dielectric constant meaningful.

Ferroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Ferroelectrics are presently of interest for phase shifters, filters, and true time delay devices. Voltage tunable paraelectrics have the potential to lower device cost and reduce power consumption compared with presently available devices. In order to improve device performance to acceptable levels, materials must have high tunability, low dielectric constant, low loss tangent, and low leakage current. Using existing predictive techniques, compositions of Ba0.6Sr0.4TiO3-based ferroelectrics with charge-compensated substitutions for Ti4+ were synthesized. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T > TC) regime. The relevance to device requirements is discussed. Results for substituted samples are compared to those for (unsubstituted) Ba0.6Sr0.4TiO3. Discussion of the impact of the results on predictive techniques for tunability is addressed.