The microwave tunable capability and its related material optimization of (Ba,Sr)TiO3 thin films in the parallel-plate capacitor form is discussed in terms of the dependence of barium concentration, acceptor doping, and in-plane film stress, based on the present broadband microwave characterization technique under various bias fields. The barium-content dependence indicates the tradeoff between tunability and dielectric loss, and the notable field-induced loss in SrTiO3 is confirmed as an intrinsic quasi-Debye contribution. The Mg dopant incorporated into a perovskite lattice shows almost no effectiveness on tunable device performance, except for enhanced insulation as an electron acceptor, while the low bias-field dependence of the dielectric loss suggests the possibility of the partial occupation of the alkaline-earth-ion site by Mg. The reduction of in-plane thermal stress controlled by the pressure during sputtering deposition leads to higher permittivity and tunability while degrading the film crystallinity by ion bombardment. The low-frequency loss tends to increase with crystal damage; however, the microwave loss remains unchanged, revealing the applicability of sputtering stress control to real microwave devices. In addition, we demonstrate the operation of an analog phase shifter using parallel-plate ferroelectric tunable capacitors and its application to a phased array antenna monolithically integrated on a silicon substrate.