We have grown 100 periodic SiO2/SiO2+Ag multi-nano-layered systems where the SiO2+Ag layers were 7.26 nm and SiO2 buffer layer were 4 nm, total thickness is 563 nm. Using interferometer as well as in-situ thickness monitoring, we measured the thickness of the layers; using Rutherford Backscattering Spectrometry (RBS) measured the concentration and distribution of Ag in SiO2. The electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment by 5 MeV Si ions. The energy of the Si ions were chosen such that the ions are stopped in the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. The electrical conductivity measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the figure of merit as a function of the bombardment fluence.