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For exploring the prospect of higher-k dielectric phase engineering on a high
mobility substrate, films of Hf1-xZrxO2 with
varying x-values (0 ≤ x ≤ 1) were deposited on
Al2O3 passivated Ge substrates using atomic layer
deposition (ALD) with a cyclic deposit-anneal-deposit-anneal (DADA) scheme. The
evolution of monoclinic to higher-k tetragonal structure with increasing
ZrO2 concentration was probed by grazing incident x-ray
diffraction and partial reciprocal space maps using the highly brilliant
synchrotron x-ray source at the Cornell High Energy Synchrotron Source (CHESS).
A primarily amorphous/nano-crystalline matrix of the asdeposited films changed
to randomly aligned grains of nanocrystalline MO2 (M=Hf, Zr)
after post deposition annealing at 800 °C for 200 seconds. In contrast,
the DADA films annealed for same thermal budget showed high degree of preferred
orientation along certain crystallographic directions. With increasing
ZrO2 content, the structure of the films changed from a monoclinic to
a tetragonal phase. A lower amount of ZrO2 (x = 0.33) was
required for stabilizing the tetragonal phase in films grown on
Al2O3 passivated Ge substrate as compared to similar
films grown on a Si substrate via the same DADA process (x ≥
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