PbTe-PbS materials are promising for thermoelectric power generation applications. For the composition of (Pb0.95Sn0.05Te)0.92(PbS)0.08 nanostructuring from nucleation and growth and spinodal decomposition has been reported along with thermal conductivity of approximately 1.1 W/m·K at 650 K [1]. Based on temperature-dependent measurements of electrical conductivity, thermopower, and thermal conductivity, the thermoelectric figure of merit, ZT, are ~1.5 at 650 K for cast ingots.

To develop larger quantities of material for device fabrication, advancement in the synthesis, processing and production of (Pb0.95Sn0.05Te)0.92(PbS)0.08 is necessary. Powder processing of samples is a well-known technique for increasing sample strength, and uniformity. In this presentation, we show sample fabrication and processing details of pulsed electric current sintering (PECS) processed (Pb0.95Sn0.05Te)0.92(PbS)0.08 materials and their thermoelectric properties along with the latest advancements in the preparation of these materials.

The U.S. military uses large amounts of fuel during deployments and battlefield operations. Consequently, the U.S. military has a strong need to develop technologies that increase fuel efficiency and minimize fuel requirements all along the logistics trail and in all battlefield operations. There are additional requirements to reduce and minimize the environmental footprint of various military equipment and operations and reduce the need for batteries (non-rechargeable) in battlefield operations. The tri-agency SERDP (Strategic Environmental Research and Development Program) office is sponsoring a challenging, high-payoff project to develop a lightweight, small form-factor, soldier-portable advanced thermoelectric generator (TEG) system prototype to recover and convert waste heat from a variety of deployed equipment with the ultimate purpose of obtaining additional power for soldier battery charging, advanced capacitor charging, and other battlefield power applications. The project seeks to achieve power conversion efficiencies of 10% (double current commercial TE conversion efficiencies) in a system with ˜1.6-kW power output for a spectrum of battlefield power applications. In order to meet this objective, the project is taking on the multi-faceted challenges of tailoring LAST/LASTT-based thermoelectric (TE) materials for the proper temperature ranges (300 K – 700 K), fabricating these materials with cost-effective hot-pressed and sintered processes while maintaining their TE properties, measuring and characterizing their thermal fatigue and structural properties, developing the proper manufacturing processes for the TE materials and modules, designing and fabricating the necessary microtechnology heat exchangers, and fabricating and testing the final TEG system. The ultimate goal is to provide an opportunity to deploy these TEG systems in a wide variety of current military equipment. This would help the Army in achieving one of the Office of Secretary of Defense’s major strategic objectives to maintain and enhance operational effectiveness while reducing total force energy demands. The presentation will review the progress made on 1) the performance of LAST / LASTT TE materials and tailoring their temperature dependency; 2) evaluating the structural (Elastic modulus, Poisson’s ratio and mechanical strength) properties of these materials, 3) development of the necessary LAST/LASTT-based TE modules, 4) development of the required hot- and cold-side microtechnology heat exchangers, and 5) the overall system designs for 30 kW and 60 kW TQG applications and potential performance pathways/differences for these two TQG cases. This work leverages critical fundamental research performed by the Office of Naval Research in developing LAST/LASTT materials.

ZnO has shown great promise for the application in optoelectronic devices. Since the modulation of conductivity is one of the key issues in device performances, we have applied the Monte Carlo method to analyze the mobility of poly-crystalline MgZnO/ZnO heterostructure thin film layer in this paper. The effects of the grain boundary scattering, ionized impurity scattering, as well as phonon scattering are considered. Our study shows that with a design of modulation doping by including the effects of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed to improve the mobility of the ZnO layer by order(s) of magnitude. Simulation results are also confirmed by our experimental works that polarization effects play an important role to attract carriers and to increase the mobility.

For the material (Pb0.95Sn0.05Te)1-x(PbS)x nanostructuring from nucleation and growth and spinodal decomposition were reported to enhance the thermoelectric figure of merit over bulk PbTe, producing ZT of 1.1 - 1.4 at 650 K for x = 0.08[1]. Thermoelectric modules made from (Pb0.95Sn0.05Te)1-x(PbS)x materials with various hot-side metal electrodes were fabricated and tested. Short circuit current was measured on unicouples of Pb0.95Sn0.05Te – PbS 8% (n-type) legs and Ag0.9Pb9Sn9Sb0.6Te20 (p-type) legs over 10 (A) for a hot side temperature of 870K, and a cold side of 300K. Hot pressed (Pb0.95Sn0.05Te)1-x(PbS)x materials were also investigated for module fabrication. Investigations of the electrical properties of hot-pressed (Pb0.95Sn0.05Te)1-x(PbS)x materials are presented along with the latest advancements in the fabrication and characteristics of modules based on the processing of these materials.

Thermoelectric modules are of great interest for power generation applications where temperature gradients of approximately 500K exist, and hot side temperatures near 800K. The fabrication of such modules requires optimization of the material compositions, low contact resistivities, and low thermal loss.

AgPbmSbTe2+m (LAST) and Ag(Pb1-xSnx)m SbTe2+m (LASTT) compounds are among the best known materials appropriate for this temperature range. Various measurement systems have been developed and used to characterize bulk samples in the LAST and LASTT systems within this operating temperature range. From the characterized data, modeling of modules based on these materials and segmented legs using LAST(T) with Bi2Te3 have been used to identify the optimal geometry for the individual legs, and the length of the Bi2Te3 segments. We have segmented LAST(T) with Bi2Te3 and achieved contact resistivities of less than 10 μΩ•cm2.

Here we give a detailed presentation on the procedures used in the fabrication of thermoelectric generators based on LAST, LASTT, and segmented with Bi2Te3 materials. We also present the output data on these generators.

We report the synthesis of nanostructured composite PbTe with excess Pb and Sb metal inclusions. Scanning and transmission electron microscopy reveal these inclusions in both the nano- and macroscales. The electrical conductivity and Seebeck coefficient dependence on temperature show unusual trends which depend on the inclusion Pb/Sb ratio. Several ratios showed marked enhancements in power factor at 700 K. The thermal conductivity of these composites is reported.

Germanium dioxide nanowires have gained considerable interest lately [1, 2], in part this is due to the bandgap of 2.44 eV, and high index of refraction, n = 1.63 [3]. In this paper we report a simple fabrication technique for making large quantities of GeO2 wires with diameters ranging from 40 nm to >500 nm on different substrates. The nanowires show strong preferential growth at gold catalyst locations on the silicon substrate. The nanowires were grown on silicon, tungsten, quartz, and nickel substrates at locations where a ∼10 nm film of Au was deposited. Growth and diameter of the wires are strongly dependent on the background gas (room air) and the length of time exposed to air at the growth temperature. Presented here are the growth conditions, and images of the resulting wires fabricated. The products are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) as well as X-Ray diffraction (XRD). The observations show the products are crystalline GeO2 nanowires.

Germanium dioxide nanowires have gained significant interest lately due to the the bandgap of 2.44 eV, and high index of refraction, n=1.63. In this paper we aim at investigating the lateral growth of high density metal-catalyzed germanium dioxide nanowires between electrodes. The gaps between two electrodes varied. The catalyst metal was placed on the electrodes, followed by a thermal annealing process, resulting in lateral growth of germanium dioxide whiskers with several microns length and eventually the formation of bridge-like nanostructures. These whiskers have certain unique properties, such as a high surface-to-volume ratio and the capability of connecting two electrodes. Because of these properties, the growth of whiskers from the electrodes has the potential to be developed as electronic devices such as nanosensors. These products are characterized by scanning electron microscopy (SEM), as well as X-Ray diffraction (XRD).

A high performance of wavelength 870nm resonant cavity LED (RCLED) was fabricated. The high performance of InGaAs/GaAs multiple quantum wells (MQWs) and distributed Bragg reflector (DBR) were employed to achieve the high transmission rate. Two devices A and B were fabricated in this paper. Device A has an offset of 10nm between active region gain and resonant gain, and device B without it. Due to the wavelength shift of active region gain is faster than that of DBR's resonant gain at higher temperature. Device A shows the better temperature performances than device B. A cutoff frequency of 60MHz, a low forward voltage of 1.6V, a output power of 1mW at 10mA and a output power temperature variation (ΔP/ΔT) of –0.02dBm/ °C with chip dimensions of 220um × 220um and 85um diameter emitting window are obtained.