5 results
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 10 / Issue 1 / February 2018
- Published online by Cambridge University Press:
- 27 November 2017, pp. 39-46
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Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 7 / Issue 3-4 / June 2015
- Published online by Cambridge University Press:
- 05 February 2015, pp. 287-296
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InAlN/GaN HEMTs based L-band high-power packaged amplifiers
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 6 / Issue 6 / December 2014
- Published online by Cambridge University Press:
- 25 February 2014, pp. 565-572
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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 23 March 2010, pp. 105-114
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Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E9.31
- Print publication:
- 2005
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