Deformation behavior of the BN film was dynamically observed by high-resolution transmission electron microscopy. BN thin films were deposited on a narrow edge of Si flakes, using inductively coupled plasma-enhanced chemical vapor deposition. High-resolution observation of the sample revealed that the BN film was possibly deposited on the edge of the Si thinned to less than 10 nm in thickness, whose morphology varied depending on the thickness of the Si edge. Intriguing mechanical properties of the BN films, especially relating their dynamic behavior, were clearly verified by the high-resolution observation with piezo-ceramic tube for three-axis positioning of an indenter.

Cubic boron nitride (cBN) thin films were deposited on silicon wafers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD). By using special substrate pre-treatment processes including positive biasing treatment in H2 plasma or 1200 K pre-heating in H2 atmosphere followed by an N2 plasma treatment, turbostratic BN (tBN) intermediate layer was revealed to directly grow on Si substrates without an initial amorphous layer. The thickness of the tBN transition layer can be reduced to less than 3 nm.

The transformation of an active carbon film with Pt nanoparticles to onion-like fullerenes has been in-situ investigated by a high-resolution transmission electron microscope. It was found that the onion-like fullerenes/metals polycrystalline film was formed under electron irradiation. The formation process was consisted of three steps: first, the flakes of onion-like fullerenes were induced by Pt nanoparticles; second, the flakes grew into a few ellipsoidal graphite shell; and third, a gradual reorganization of the formation of quasi-spheroid graphite shells and the bond of Pt particles was took place. It was a composite film of onion-like fullerenes and metal particles. It is suggested that the transformation mechanism involves an irradiation of electron and a catalytic effect of Pt nanoparticles, while any temperature rise due to electron irradiation seems to be negligibly small.