Birds in flight are prone to collide with various transparent or reflective structures. While bird–window collision has been recognised as a critical conservation issue, collision with other transparent structures has been less understood. Noise barriers made of transparent materials are considered critical hazards for birds; however, little is known about the bird mortality they cause. We conducted the first nationwide-scale estimates of bird-collision mortality caused by transparent noise barriers (TNBs) along roads in the Republic of Korea. The total length of existing roadside transparent noise barriers was estimated at 1,416 km nationwide (as of 2018), and it had been increasing exponentially. Based on carcass surveys at 25 sites, daily mortality at the observed barriers was 0.335 ± 1.132 birds/km on average, and no difference in observed mortality was detected between both sides of a single barrier and between road types (i.e. local roads and motorways). Finally, we estimated that approximately 186,000 birds (95% confidence interval: 162,465–204,812 birds) are killed annually by collisions with roadside TNBs. As privately installed barriers were not considered in this study, the actual mortality is likely be higher than our estimates. Thus, collision with TNBs could become an emerging threat to avian conservation, especially in developing and urbanising regions around the world. As such structures are not formally recognised as conservation issues of importance, more systematic surveys aided by citizen science, both for the status of TNBs and bird-collision mortality, are needed in addition to management and mitigation policies.

The efficiency of halide perovskite solar cells has progressed rapidly through a series of major breakthroughs. Currently, a certified efficiency of 25.2% has been achieved for a solar cell using a polycrystalline thin film. This is the result of having reached 75% of the Shockley–Queisser limit for single-junction solar cells. However, for further improvements, new breakthrough technologies are required. This article reviews the impact of previous breakthrough technologies on the efficiency of halide perovskite solar cells, based on certified efficiencies. We clarify the current status of halide perovskite solar cells and introduce photon recycling as the next technological innovation for higher efficiencies. Photon recycling keeps the photon concentration inside the light-harvesting layer high, and consequently, leads to open-circuit voltages close to the theoretical value. Although photon recycling has not yet been implemented in real halide perovskite solar cells, three key technologies for implementing it are examined.

We demonstrate the tungsten disulfide (WS2) thin film catalysts prepared by the sulfurization of vacuum deposited WO3 thin films for efficient hydrogen production with over 90% Faradaic efficiency. The 23-nm-thick WS2 thin film catalyst heterojunction with p-type silicon photocathode could exhibit a photocurrent density of 8.3 mA/cm2 at 0 V versus a reversible hydrogen electrode (RHE), a low onset potential of 0.2 V versus RHE when photocurrent density reaches −1 mA/cm2 and long-term stability over 10 h. The enhanced catalytic activities of WS2/p-Si photocathodes compared with the bare p-Si photocathode originate from a number of edge sites in the synthesized polycrystalline thin films, which could act as hydrogen evolution catalyst.

The Sewol ferry disaster is one of the most tragic events in Korea’s modern history. Among the 476 people on board, which included Danwon High School students (324) and teachers (14), 304 passengers died in the disaster (295 recovered corpses and 9 missing) and 172 survived. Of the rescued survivors, 72 were attending Danwon High School, located in Ansan City, and residing in a residence nearby. Because the students were young, emotionally susceptible adolescents, both the government and the parents requested the students be grouped together at a single hospital capable of appropriate psychiatric care. Korea University Ansan Hospital was the logical choice, as the only third-tier university-grade hospital with the necessary faculty and facilities within the residential area of the families of the students. We report the experiences and the lessons learned from the processes of preparing for and managing the surviving young students as a community-based hospital. (Disaster Med Public Health Preparedness. 2017;11:389–393)

The Ultra-Fast Flash Observatory (UFFO), which will be launched onboard the Lomonosov spacecraft, contains two crucial instruments: UFFO Burst Alert & Trigger Telescope (UBAT) for detection and localization of Gamma-Ray Bursts (GRBs) and the fast-response Slewing Mirror Telescope (SMT) designed for the observation of the prompt optical/UV counterparts. Here we discuss the in-space calibrations of the UBAT detector and SMT telescope. After the launch, the observations of the standard X-ray sources such as pulsar in Crab nebula will provide data for necessary calibrations of UBAT. Several standard stars will be used for the photometric calibration of SMT. The celestial X-ray sources, e.g. X-ray binaries with bright optical sources in their close angular vicinity will serve for the cross-calibration of UBAT and SMT.

The Ultra-Fast Flash Observatory (UFFO) Pathfinder for Gamma-Ray Bursts (GRBs) consists of two telescopes. The UFFO Burst Alert & Trigger Telescope (UBAT) handles the detection and localization of GRBs, and the Slewing Mirror Telescope (SMT) conducts the measurement of the UV/optical afterglow. UBAT is equipped with an X-ray detector, analog and digital signal readout electronics that detects X-rays from GRBs and determines the location. SMT is equipped with a stepping motor and the associated electronics to rotate the slewing mirror targeting the GRBs identified by UBAT. First the slewing mirror points to a GRB, then SMT obtains the optical image of the GRB using the intensified CCD and its readout electronics. The UFFO Data Acquisition system (UDAQ) is responsible for the overall function and operation of the observatory and the communication with the satellite main processor. In this paper we present the design and implementation of the electronics of UBAT and SMT as well as the architecture and implementation of UDAQ.

The UFFO (Ultra-Fast Flash Observatory) is a GRB detector on board the Lomonosov satellite, to be launched in 2013. The GRB trigger is provided by an X-ray detector, called UBAT (UFFO Burst Alarm & Trigger Telescope), which detects X-rays from the GRB and then triggers to determine the direction of the GRB and then alerts the Slewing Mirror Telescope (SMT) to turn in the direction of the GRB and record the optical photon fluxes. This report details the calibration of the two components: the MAPMTs and the YSO crystals and simulations of the UBAT. The results shows that this design can observe a GRB within a field of view of ±35° and can trigger in a time scale as short as 0.2 – 1.0 s after the appearance of a GRB X-ray spike.

The Ultra-Fast Flash Observatory (UFFO) is a space observatory for optical follow-ups of gamma ray bursts (GRBs), aiming to explore the first 60 seconds of GRBs optical emission. UFFO is utilized to catch early optical emissions from GRBs within few sec after trigger using a Gimbal mirror which redirects the optical path rather than slewing entire spacecraft. We have developed a 15 cm two-axis Gimbal mirror stage for the UFFO-Pathfinder which is going to be on board the Lomonosov satellite which is to be launched in 2013. The stage is designed for fast and accurate motion with given budgets of 3 kg of mass and 3 Watt of power. By employing stepping motors, the slewing mirror can rotate faster than 15 deg/sec so that objects in the UFFO coverage (60 deg × 60 deg) can be targeted in ~1 sec. The obtained targeting resolution is better 2 arcmin using a close-loop control with high precision rotary encoder. In this presentation, we will discuss details of design, manufacturing, space qualification tests, as well as performance tests.

This study aimed to investigate whether aquaporin 3 (Aqp3) mRNAs are expressed in immature oocytes and altered during in vitro maturation process. Five- to 6-week-old female ICR mice were primed by gonadotropin for 24 and 48 h. Immature oocytes obtained 48 h after priming were also matured in vitro for 17 to 18 h. In vivo matured oocytes were obtained after 48 h priming followed by hCG injection. Total RNAs were extracted from 80 to 150 oocytes in each experimental group, and the levels of Aqp3 mRNA were quantified by real-time reverse transcriptase polymerase chain reaction. The experiments were repeated twice using different oocytes. The Aqp3 mRNA was expressed in immature oocytes, as well as in in vitro and in vivo matured oocytes. The expression level was higher in immature oocytes obtained 48 h after priming (17.2 ± 8.6, mean ± SD) than those with no priming (5.7 ± 0.8) or obtained 24 h after priming (2.5 ± 0.8). The expression of Aqp3 mRNA decreased after in vitro maturation (1.2 ± 0.5), which was similar to in vivo matured oocytes (1.0 ± 0.0). Our work demonstrated that Aqp3 mRNA expression increased during the development of immature oocyte but decreased after completion of in vitro maturation. The results indicate that AQP3 is certainly needed for the acquisition of immature oocytes’ full growing potential within antral follicles.

We have investigated the effects of hydrogen plasma treatment on the hysteresis phenomenon and electrical properties of solid phase crystallized silicon thin film transistors (SPC-Si TFTs) employing alternating magnetic field crystallization (AMFC). We employed H2 plasma treatment on the SPC-Si active layer before SiO2 gate insulator deposition. By increasng the power and time duration of H2 plasma treatment, it was observed that hysteresis phenomenon of SPC-Si TFT was suppressed and electrical properties such as threshold voltage, field effect mobility was improved considerably. This is due to role of hydrogen atom by passivating the defects and grain boundary trap states in SPC-Si film. However, relatively high power and long hydrogen plasma treatment (100W, 5 minutes) could degrade the electrical characteristics of the device. SPC-Si TFT for 100W power of PECVD and 3 minutes with the H2 plasma treatment exhibit the significant improvement of electrical characterics (VTH = - 3.85V, μFE = 21.16cm2/Vs), and a smaller hysteresis phenomenon (∆VTH = -0.30V) which is suitable for high quality AMOLED Display.

We have studied the structural properties of hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition (PECVD). The substrate holder in reaction chamber could be biased and be heated. The Raman peak intensity at 1350 cm−1 was increased by reducing CH4 flow rate. The film structure changed from soft a-C:H to hard carbon with decreasing CH4 flow rate, resulted from increased self-bias. The 1520 cm−1 peak shifts to higher frequency by reducing the CH4flow rate, probably resulted from the increased internal stress.

Characteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.

The experimental and analytical results regarding to the effects of temperature and electrical stress on the characteristics of amorphous silicon thin-film transistors (a-Si TFT's) have been presented. The variations in the device parameters of a-Si TFT, such as threshold voltage and field-effect mobility, have been examined under various operating temperatures and electrical stress conditions. The hysteresis in the transfer characteristics and the trapped charges at the a-Si/silicon nitride interface were measured at the operating temperature ranges. From the experimental results, it has been found out that the increase of the interface charge trapping may be responsible for the degradation in the a-Si TFT characteristics. Also, an analytical formulation, employing the interface charge trapping, is presented to clarify the instability phenomena and verified successfully with the experimental results.

We present a new analytical model of amorphous silicon thin-film transistor (a-Si TFT) suitable for circuit simulators such as SPICE. The effects of localized gap state distributions of a-Si as well as temperatures on the a-Si TFT performances have been fully considered in the presented model. The parameters used in SPICE, such as transconductance, channel-length modulation, and power factor of source-drain current, are evaluated from the measured current-voltage and capacitance-voltage characteristics by employing the proposed extraction method. It has been found out that the analytical model is in good agreement with experimental data at both room temperature and elevated temperature and successfully implemented in a widely used circuit simulator.