Acid–base disequilibrium is a contributor to cancer development because it affects molecular activities such as insulin-like growth factor 1 levels and adiponectin production. However, evidence of an association of diet-induced acid–base imbalance with colorectal cancer (CRC) is limited. We examined whether colorectal carcinogenesis is attributable to a diet with a high acid load. We recruited a total of 923 CRC cases and 1846 controls at the National Cancer Center in Korea for inclusion in a case–control study. We collected information on nutrient intake and specific clinical parameters of CRC by using a semiquantitative FFQ and medical records, respectively. Potential renal acid load (PRAL) and net endogenous acid production (NEAP) were used to estimate diet-dependent acid load. We used an unconditional logistic regression model to analyse the association. Dietary acid load scores had a positive association with the odds of CRC (OR = 2·31 (95 % CI 1·79, 2·99) and OR = 2·14 (95 % CI 1·66, 2·76) for PRAL and NEAP, respectively, Pfor trend < 0·001). A stronger positive association was observed for females (OR = 3·09, 95 % CI 1·93, 4·94) than for males (OR = 1·71, 95 % CI 1·27, 2·31). Furthermore, acidogenic diets appeared to affect rectal cancer more strongly than colon cancer in females. Our study contributes to reinforcing epidemiological evidence regarding a detrimental effect of acidogenic diets on colorectal carcinogenesis. Thus, it is important to pay attention to the balance of acidogenic (e.g. poultry and red meat) and alkalinogenic foods (e.g. fruits and vegetables) in CRC prevention, especially for females.

The aim of this study is to examine the empirical insulinemic potential consisting of dietary and lifestyle factors and the interactive effect with the common genetic susceptibility locus rs2423279 on the risk of colorectal cancer (CRC). This case–control study was conducted with 923 CRC patients and 1846 controls. The empirical measures for assessing the insulinemic potential, namely, the empirical dietary index for hyperinsulinemia (EDIH), for insulin resistance (EDIR), the empirical lifestyle index for hyperinsulinemia (ELIH), and for insulin resistance (ELIR), were calculated based on semiquantitative food frequency questionnaire and lifestyle questionnaire. A genetic variant of rs2423279 was genotyped. The CRC patients were more likely to score in the highest quartile for the ELIH (OR 2·90, Q4 v. Q1, 95 % CI (2·01, 4·19), P for trend < 0·001), EDIR (OR 3·32, Q4 v. Q1, 95 % CI (2·32, 4·74), P < 0·001) and ELIR (OR 2·79, Q4 v. Q1, 95 % CI (1·96, 3·97), P < 0·001) than the controls. The significant effect between the ELIR, which assesses dietary and lifestyle patterns related to insulin resistance, and C allele carriers of rs2423279 was stronger than that for homozygous T allele carriers (OR 2·50, 95 % CI (1·78, 3·51), P for interaction = 0·034). The empirical insulinemic potential for insulin resistance might have interactive effects with the rs2423279 polymorphism on the risk of CRC. The results of this study suggest the basis of the metabolic impact of the insulin response on colorectal carcinogenesis.

We demonstrate the tungsten disulfide (WS2) thin film catalysts prepared by the sulfurization of vacuum deposited WO3 thin films for efficient hydrogen production with over 90% Faradaic efficiency. The 23-nm-thick WS2 thin film catalyst heterojunction with p-type silicon photocathode could exhibit a photocurrent density of 8.3 mA/cm2 at 0 V versus a reversible hydrogen electrode (RHE), a low onset potential of 0.2 V versus RHE when photocurrent density reaches −1 mA/cm2 and long-term stability over 10 h. The enhanced catalytic activities of WS2/p-Si photocathodes compared with the bare p-Si photocathode originate from a number of edge sites in the synthesized polycrystalline thin films, which could act as hydrogen evolution catalyst.

The ultraviolet (UV) color-color relation of early-type galaxies (ETGs) in the nearby universe (0.05 < z < 0.12) is re-examined with the latest GALEX GR6 and SDSS DR7 data. By drawing the FUV – NUV (as a measure of UV temperature) versus FUV – r (as a measure of UV amplitude) color-color diagram for the morphologically-cleaned, spectroscopically-cleaned sample of ~3700 quiescent ETGs, we find that the “old and dead“ ETGs consist of a well-defined sequence in UV colors, the “UV red sequence”, so that the stronger UV excess galaxies should have a harder UV spectral shape systematically. However, the observed UV spectral slope is too steep to be reproduced by the canonical models in which the UV flux is mainly controlled by age or metallicity parameters. The observed data support the helium enhancement scenario in which the UV spectral shape of UV upturn (FUV – NUV < 0.9; FUV – r ~ 6) galaxies may be governed by the minority population of helium-enhanced horizontal-branch (HB) stars.

12Cr ODS steel samples were prepared by mechanical alloying of the metal powders with 20-30 nm Y2O3 particles followed by isostatic pressing, hot rolling and final heat treatment. Evolutions of oxide particles such as YTaO4 and YCrO3 after each fabrication step were investigated by using TEM with EDS. Crystallographic correlation between oxide particles and the matrix was investigated in a HIPped sample, and interactions between dislocations and oxide particles were observed in hot rolled or heat treated sample. Size distributions of oxide particles were measured by carbon replica samples and it was found that coarsening of oxide particles from 9 to 12 nm occurred during hot rolling process. Additional isothermal annealing at 1250 ˚C revealed that phase transformation of oxide particles from monoclinic YTaO4 to face centered cubic Y3TaO7 was observed.

To develop measures to prevent neonatal rotavirus infection, we carried out rotavirus surveillance testing on all the newborns who were admitted to a newborn nursery in Korea during 1 year. We investigated the characteristics of neonatal rotavirus infection and found that it occurred throughout the year with the G4P[6] strain exclusively. Most newborns were infected nosocomially and showed no symptoms. We concluded that rotavirus might be transmitted from asymptomatic infected newborns who were born outside the hospital. We recommend isolation and rotavirus surveillance testing for all transfer patients.

We developed a new Cu–Zn wetting layer for Pb-free solders. By adding Zn to the Cu wetting layer, intermetallic growth in the Sn–Ag–Cu (SAC) solder interfaces was delayed. Cu3Sn intermetallic compounds and microvoids were not observed in the SAC/Cu–Zn interfaces after aging. The drop reliability of the SAC solder/Cu–Zn joints was excellent.

Vertically-aligned Mn (10%)-doped Fe3O4 (Fe2.7Mn0.3O4) nanowire arrays were produced by the reduction/substitution of pre-grown Fe2O3 nanowires. These nanowires were ferromagnetic with a Verwey temperature of 129 K. X-ray magnetic circular dichroism measurements revealed that the Mn2+ ions preferentially occupy the tetrahedral sites, substituting for the Fe3+ ions. We observed that the Mn substitution decreases the magnetization, but increases the electrical conductivity. We developed highly sensitive gas sensors using these nanowire arrays, operating at room temperature, whose sensitivity showed a correlation with their bond strength of diatomic/triatomic molecules. Based on the fact that the sensitivity was highest toward water vapor, an excellent-performance humidity sensor was fabricated.

We report the synthesis of new precursors Ba(thd)2(tmeea) and Sr(thd)2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)2(OiPr)2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420°C were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.

We investigated the photoluminescence as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4-4xS4x solid solution system based on the Al-related compounds of ZnAl2Se4, ZnAl2S4, CdAl2Se4, and CdAl2S4. The single crystals of the system with 0.0 ≤ x ≤ 1.0 were grown by the chemical transport reaction technique. The Zn1-xCdxAl2Se4-4xS4x crystallizes in a defect chalcopyrite structure for a whole composition and has an optical energy gap ranging from 3.525 to 3.577 eV at 13 K. The photoluminescence spectra at 13 K showed a strong emission band in the blue spectral region and a weak broad emission band in the visible region due to donor–acceptor pair recombination. The composition and temperature dependence of these bands were examined in the investigated regions. The simple energy band scheme for the radiative mechanisms of the Zn1-xCdxAl2Se4-4xS4x is proposed on the basis of our experimental results along with photo-induced current transient spectroscopy measurements.

MgxZn1-xSi: Ho3+, MgxZn1-xSe: Er3+, and MgxZn1-xSe: Tm3+ single crystals were grown by the closed-tube sublimation method. The single crystals crystallized into a zincblende structure at the composition x = 0.11 and a wurtzite structure at the composition x = 0.25, 0.32, and 0.41. The trivalent ions (Ho3+, Er3+, and Tm3+) of the rare-earth elements Ho, Er, and Tm site in Td and C3v symmetries in the single crystals with zincblende and wurtzite structures, respectively. Sharp emission peaks appeared in the photoluminescence spectra of the single crystals. These emission peaks are identified to originate from the radiation recombination between the energy levels of the trivalent ions sited in Td and C3v symmetries.

Leptospirosis has significantly decreased in Korea since 1988, following the leptospiral vaccination programme initiated in 1988. Whether this wholly explains the decreased incidence is uncertain. As an initial step to answer this question, infection rates of Leptospira interrogans in field rodents, Apodemis agrarius, were examined and compared with previous data.

Two hundred and twenty-two A. agrarius were captured during October–December 1996. Spirochaetes were isolated from 22 (9·9%) and leptospiral DNA was detected in an additional 6 rodents (12·6%). Subsequent microscopic agglutination tests (MAT) classified all these isolates as L. interrogans serogroup Icterohaemorrhagiae serovar lai. The above data did not significantly differ from previous surveys in 1984–7. There was no significant change of L. interrogans infection in field rodents following the introduction of the vaccination programme in Korea. Further studies are needed to determine the role of human vaccination in reducing incidence.

Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Pt/RuO2 double electrode was successfully prepared by using a new alkoxide-alkanolamine, sol-gel method. It was observed that the use of Pt/RuO2 double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and no degradation in polarization was observed up to 1011 cycles.

The experimental results regarding to the effects of ultraviolet (UV) light illumination on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) have been presented. The device parameters of a-Si:H TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by electrical stress and visible light illumination, but substantially improved by UV radiation. This may be attributed to an annealing effect on the dangling-bond defects, involving a number of phonons generated by absorption of high energy UV photons in the a-Si:H TFT channel. It has been also observed that the off-current of a-Si:H TFT decreases remarkably while the on-current changes very little. From the experimental results, we report that the improved on/off current ratio of a-Si:H TFT may be achieved by UV radiation.

We present a new analytical model of amorphous silicon thin-film transistor (a-Si TFT) suitable for circuit simulators such as SPICE. The effects of localized gap state distributions of a-Si as well as temperatures on the a-Si TFT performances have been fully considered in the presented model. The parameters used in SPICE, such as transconductance, channel-length modulation, and power factor of source-drain current, are evaluated from the measured current-voltage and capacitance-voltage characteristics by employing the proposed extraction method. It has been found out that the analytical model is in good agreement with experimental data at both room temperature and elevated temperature and successfully implemented in a widely used circuit simulator.