Seasonal influenza virus epidemics have a major impact on healthcare systems. Data on population susceptibility to emerging influenza virus strains during the interepidemic period can guide planning for resource allocation of an upcoming influenza season. This study sought to assess the population susceptibility to representative emerging influenza virus strains collected during the interepidemic period. The microneutralisation antibody titers (MN titers) of a human serum panel against representative emerging influenza strains collected during the interepidemic period before the 2018/2019 winter influenza season (H1N1-inter and H3N2-inter) were compared with those against influenza strains representative of previous epidemics (H1N1-pre and H3N2-pre). A multifaceted approach, incorporating both genetic and antigenic data, was used in selecting these representative influenza virus strains for the MN assay. A significantly higher proportion of individuals had a ⩾four-fold reduction in MN titers between H1N1-inter and H1N1-pre than that between H3N2-inter and H3N2-pre (28.5% (127/445) vs. 4.9% (22/445), P < 0.001). The geometric mean titer (GMT) of H1N1-inter was significantly lower than that of H1N1-pre (381 (95% CI 339–428) vs. 713 (95% CI 641–792), P < 0.001), while there was no significant difference in the GMT between H3N2-inter and H3N2-pre. Since A(H1N1) predominated the 2018–2019 winter influenza epidemic, our results corroborated the epidemic subtype.

The objective of this investigation was to utilize the first-principles molecular dynamics computational approach to investigate the lithiation characteristics of empty silicon clathrates (Si46) for applications as potential anode materials in lithium-ion batteries. The energy of formation, volume expansion, and theoretical capacity were computed for empty silicon clathrates as a function of Li. The theoretical results were compared against experimental data of long-term cyclic tests performed on half-cells using electrodes fabricated from Si46 prepared using a Hofmann-type elimination–oxidation reaction. The comparison revealed that the theoretically predicted capacity (of 791.6 mAh/g) agreed with experimental data (809 mAh/g) that occurred after insertion of 48 Li atoms. The calculations showed that overlithiation beyond 66 Li atoms can cause large volume expansion with a volume strain as high as 120%, which may correlate to experimental observations of decreasing capacities from the maximum at 1030 mAh/g to 553 mA h/g during long-term cycling tests. The finding suggests that overlithiation beyond 66 Li atoms may have caused damage to the cage structure and led to lower reversible capacities.

Several processing methods were developed and evaluated for synthesizing empty silicon clathrates. A solution synthesis method based on the Hofmann-elimination oxidation reaction was successfully utilized to produce 20 mg of empty Si46. Half-cells using the Si46 electrodes were successfully cycled for 1000 cycles at rate of 5.3C. The capacity of the Si46 electrode in long-term tests was 675 mAh/g at the 4th cycle, but increased to 809 mAh/g at 50 cycles. The corresponding Coulombic efficiency was better than 99%. The capacity dropped from 809 to 553 mAh/g after 1000 cycles while maintaining a 99% Coulombic efficiency. In comparison, a Ba8Al8Si38 electrode could be cycled for about 200 cycles with a lower capacity and Coulombic efficiency. Potential applications of empty silicon clathrates as anode materials in Li-ion batteries are discussed.

Rough-surface polycrystalline silicon films have been used for fabrication of electrically erasable-programmable read-only-memories (EEPROM). Silicon-Rich Oxides (SRO), also known as semi-insulating polycrystalline silicon (SIPOS), have been recommended for use as electron injectors. The advantage of SRO as injectors is that both the bottom and top surfaces of the film can be used to obtain high field enhancement. An ultra-thin multi-layer structure of silicon and silicon dioxide has been fabricated by low pressure chemical vapor deposition (LPCVD). High resolution TEM shows alternating layers of 50 A thick SiO2 and polycrystalline Si (grain size ∼ 80 A) films were deposited and MOS capacitors using this multilayer dielectric were studied to understand their electrical characteristics. Both I-V and C-V measurements show that the Fowler-Nordheim tunneling current is proportional to the number of polycrystalline layers. The “turn-on” voltage of the tunneling current is determined by the thickness of first SiO2 layer, and the effective dielectric constant varies from 3.9 to 9.1, proportional to the number of poly-Si layers within the multi-layer structure (MLS). For a 350 Å stack (7 layers), the interface trap density, Dit, was 3×1010 traps/cm2, and the effective dielectric constant was roughly 9.