We investigated whether the one-time application of polymer-coated urea (PCU) before transplanting could simultaneously improve the grain yield and nitrogen use efficiency (NUE) of japonica-indica hybrid rice (JIHR) through a field experiment. The local high-yield JIHR cultivar Chunyou-927 was field grown during the rice-growing seasons in 2019 and 2020. The experiment consisted of three treatments: no nitrogen application (0N), application of conventional urea (CU), and the one-time application of PCU. Grain yield was 1.0–1.3 t/ha higher, and agronomic NUE (kg grain yield increase per kg N applied) was 5.2–5.9 kg/kg higher, respectively, under the PCU treatment compared with the CU treatment across the two study years. When compared with the CU treatment, the PCU treatment could (1) improve root morphological trait, (2) reduce redundant vegetative growth during the early growth period, (3) increase matter production during the mid and late growth period, and (4) increase plant activity during the grain-filling period. Overall, our findings indicate that one-time PCU application before transplanting of the JIHR cultivar holds great promise for increasing grain yield and NUE.

The functions of acoustic-phonetic modifications in infant-directed speech (IDS) remain a question: do they specifically serve to facilitate language learning via enhanced phonemic contrasts (the hyperarticulation hypothesis) or primarily to improve communication via prosodic exaggeration (the prosodic hypothesis)? The study of lexical tones provides a unique opportunity to shed light on this, as lexical tones are phonemically contrastive, yet their primary cue, pitch, is also a prosodic cue. This study investigated Cantonese IDS and found increased intra-talker variation of lexical tones, which more likely posed a challenge to rather than facilitated phonetic learning. Although tonal space was expanded which could facilitate phonetic learning, its expansion was a function of overall intonational modifications. Similar findings were observed in speech to pets who should not benefit from larger phonemic distinction. We conclude that lexical-tone adjustments in IDS mainly serve to broadly enhance communication rather than specifically increase phonemic contrast for learners.

Measurements in the infrared wavelength domain allow direct assessment of the physical state and energy balance of cool matter in space, enabling the detailed study of the processes that govern the formation and evolution of stars and planetary systems in galaxies over cosmic time. Previous infrared missions revealed a great deal about the obscured Universe, but were hampered by limited sensitivity.

SPICA takes the next step in infrared observational capability by combining a large 2.5-meter diameter telescope, cooled to below 8 K, with instruments employing ultra-sensitive detectors. A combination of passive cooling and mechanical coolers will be used to cool both the telescope and the instruments. With mechanical coolers the mission lifetime is not limited by the supply of cryogen. With the combination of low telescope background and instruments with state-of-the-art detectors SPICA provides a huge advance on the capabilities of previous missions.

SPICA instruments offer spectral resolving power ranging from R ~50 through 11 000 in the 17–230 μm domain and R ~28.000 spectroscopy between 12 and 18 μm. SPICA will provide efficient 30–37 μm broad band mapping, and small field spectroscopic and polarimetric imaging at 100, 200 and 350 μm. SPICA will provide infrared spectroscopy with an unprecedented sensitivity of ~5 × 10−20 W m−2 (5σ/1 h)—over two orders of magnitude improvement over what earlier missions. This exceptional performance leap, will open entirely new domains in infrared astronomy; galaxy evolution and metal production over cosmic time, dust formation and evolution from very early epochs onwards, the formation history of planetary systems.

The high Al content AlGaN epilayers have been obtained by metalorganic chemical vapor deposition (MOCVD), and the optical property has been investigated by photoluminescence (PL) spectroscopy. Longitudinal-optic (LO) phonon mode has been studied by Raman scattering. Further analysis shows that the edge dislocation is an important factor influencing optical quality of AlGaN epilayers, and it also shows that the correlation between the A1 (LO) polar modes and the edge dislocation is intensive, which may be expected to become a characterization method of the related crystal defects.

The influence of pressure on the MOCVD grown InAlN/AlN/GaN heterostructure has been investigated by high-resolution X-ray diffraction, Hall measurement and atomic force microscopy. High pressure is beneficial to increase indium incorporation efficiency. The electrical properties of InAlN/AlN/GaN heterostructure become better with the pressure decreasing from 100 Torr to 50 Torr. Indium droplets tend to form on the InAlN surface at high pressure. The edge of the indium droplet is the Al-rich region while the interior is the In-rich region, demonstrated by the phase-contrast mode. Phase contrast across the V-defect is strong on the surface of InAlN grown at low pressure (50 Torr) whereas it is not evident at high pressure (100 Torr), indicating that large stress in the InAlN film will enhance the compositional variation.

The I-V characteristics of AlGaN/GaN high electron mobility transistors in the temperature range between 100 K and 300 K are studied. It is found that both the maximum drain-source current and transconductance decrease with the increase of temperature. Decrease of the electron mobility with increasing temperature is considered to be the main cause for that condition. The threshold voltage shows a forward shift, which can be explained by the increase of Schottky barrier with increasing temperature. It is found that at VGS = 0 V the drain-source current reduces with the ascending temperature, which should be due to the variation of the electron mobility with the temperature. While at VGS = −5 V the drain-source current is found to increase with the ascending temperature, it is suggested to be caused by the positive temperature coefficient of the electron transport in the depleted region.

The temperature dependence of the I-V characteristics on Au/Ni-HEMT Schottky contacts was measured and analyzed. Large deviations from the thermionic emission and thermionic-field emission model were observed in the I-V-T characteristics. The thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. Using a revised thin surface barrier model, the calculated curves match well with the measured curves. It is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.

This is a theoretical study of the InGaN back-barrier on the properties of the Al03Ga0.7N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrödinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices.

A high strength ferritic steel with finely dispersive precipitates was investigated to reveal the fundamental strengthening mechanisms in this alloy. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides with an average diameter of 10 nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of grains. The dual precipitate structure of finely dispersive TiC precipitates in the matrix and coarse M23C6 at grain boundaries provides combined matrix and grain boundary strengthening. The resulting yield stress is two or three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels. The effect of the particle size, particle distribution and intrinsic particle strength have been investigated through dislocation dynamics (DD) simulations and the relationship for resolved shear stress for single crystal under this condition has been presented using simulation data. The results show that the finely dispersive precipitates can strengthen the material by pinning the dislocations up to a certain shear stress and retarding the recovery as well as annihilation of dislocations. The DD results also show that strengthening is not only a function of the density of the nano-scale precipitates but also of their size. This size effect is explained using a mechanistic model developed based on dislocation-particle interaction.

Transmission electron microscopy (TEM) and spectroscopy have been evolved to a stage such that they can be routinely used to probe the structure and composition of the materials with the resolution of a single atomic column. However, a direct in situ TEM observation of structural evolution of the materials in a lithium ion battery during dynamic operation of the battery has never been reported. In this paper, we report the results of exploring the in situ TEM techniques for observation of interfaces in the lithium ion battery during the operation of the battery. A miniature battery was fabricated using a single nanowire and an ionic liquid electrolyte. The structure and composition of the interface across the anode and the electrolyte was studied using TEM imaging, electron diffraction, and electron energy-loss spectroscopy. In addition, we also explored the possibilities of carrying out in situ TEM studies of lithium ion batteries with a solid state electrolyte.

When C57BL/6 mice were infected with Angiostrongylus cantonensis, the percentage of T helper (CD4+) cells and T supressor (CD8+) cells in peripheral blood increased weekly until the third and seventh week respectively, and then gradually decreased. C57BL/6 mice were depleted of CD4+ and CD8+ T cells by in vivo injection of anti-CD4 and anti-CD8 monoclonal antibodies, respectively, and then infected with A. cantonensis. There were significantly more and less worms recovered in the mice depleted of CD4+ and CD8+ T cells respectively than in undepleted mice. Discrete subpopulations of T cells from mice exposed to A. cantonensis for 3 weeks or 7 weeks were adoptively transferred to syngeneic recipients which were then given a challenge infection. Protection was mediated by a CD4+ T cell population present in mice after 3 weeks of infection but was not demonstrable with cells taken 7 weeks after infection. When CD4+ T cells obtained from 3-week infected mice were mixed with 5% CD8+ T cells obtained from mice infected for 7 weeks, no significant transfer of resistance was observed. Thus, immune responses to A. cantonensis in mice were regulated by discrete subpopulations of T lymphocytes.

Low solubility dopant-host systems are well suited to study secondary phase segregation-microstructure dependence. We discuss the effect of microstructure on secondary phase segregation in epitaxial/oriented ZnO thin films with Cr as an unfavorable dopant (Cr:ZnO). Since differences in thin film microstructure are a function of the substrate and its orientation, simultaneous chemical vapor depositions were carried out on single crystals of Si (100), c-axis oriented Al2O3 (c-ALO), and r-axis oriented Al2O3 (r-ALO) resulting in epitaxial film growth on r-ALO and c-axis oriented film growth on Si and c-ALO, with a difference in vertical grain boundary density. To enhance the analysis sensitivity to the microstructure difference, the thickness of Cr:ZnO films was maintained at ∼50 nm. High-resolution transmission electron microscopy (HRTEM) analysis indicates uniform stress distribution in Cr:ZnO grown on r-ALO. Surface sensitive x-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) techniques were utilized for analysis of the data. We observe that a higher grain boundary density and the presence of an amorphous layer at the interface for films grown on Si(100) single crystal led to interfacial Cr-based secondary phase segregation as opposed to lower grain boundary density and epitaxial films grown on c-ALO and r-ALO single crystals, respectively. We also discuss the effects of trace carbon solubility on the film microstructure/secondary phase segregation relationship.

ZnO grown on α-Al2O3(0001) generally possesses an orientation such that α-Al2O3(0001) is parallel to ZnO(0001) and two in-plane domains nucleate, so that α-Al2O3[11¯20] is parallel to ZnO[11¯20] and/or α-Al2O3[11¯20] is parallel to ZnO[10¯10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3(0001) using metalorganic chemical vapor deposition (MOCVD). We find that α-Al2O3[11¯20] is parallel to ZnO[10¯10], but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3(¯1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)2] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

Oxygen uptake and conductivity were measured by nuclear-reaction analysis and alternating current impedance technique at the intermediate temperature range on sol-gel grown nanocrystalline ceria films with average grain-sizes 7 nm and 38 nm synthesized at 723 and 1173 K, respectively. Higher oxygen uptake and lower ionic conductivity were observed in ceria films with ∼7-nm grain size. High permeation-assisted oxygen diffusion in nanocrystallites combined with oxygen trapping in the disordered region contributed to higher oxygen uptake. However, the lower ionic conductivity in the film resulted from the absence of long-range lattice ordering and inactive grain-boundary/surface oxygen vacancy sites due to oxygenation. The relationship between oxygen uptake and conductivity in ceria is discussed in details by considering grain-size dependent defect density, related surface area, and enhanced oxygen mobility.

The formation of Au nanoclusters in MgO using ion implantation and subsequent annealing was investigated. Approximately 1200 and 1400 Au2+ ions/nm2 were implanted in MgO(100) substrates at 300 and 975 K, respectively. Subsequent annealing in air for 10 h at 1275 K promoted the formation of Au nanostructures in MgO. The sample implanted at 300 K showed severe radiation damage. In addition, two-dimensional plateletlike structures with possible composition of Au and MgO were formed during implantation in the sample that was implanted at 300 K. In contrast, Au implantation at 975 K promoted the nucleation of Au nanostructures during implantation. Subsequent annealing of both samples show three-dimensional clusters in MgO. However, the 975 K implanted sample shows clean, high-quality, single-crystal Au clusters that have an epitaxial relationship to MgO(100).