To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
We report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.
The dependence of dark conductivity and room temperature Raman spectra on boron and hydrogen incorporation in thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma enhanced chemical vapor deposition was investigated. It was found that the dominant conductivity is Mott variable range hopping conduction. However, at lower temperatures, Efros-Shklosvkii hopping conduction is observed and contributes to the total conductivity. For structural characterization, transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of boron and hydrogen incorporation. With an increase of hydrogen incorporation and/or substrate temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of the short range order. The line width and frequency of the Raman TO Raman peak correlate with electrical measurements and suggest that this technique can be used for non-destructive characterization of a-Si:H.
Iron disilicide shows great promise as a silicon based light emitter operating in the 1.3 to 1.5 μm wavelength range. However, there exists a number of questions related to the band structure and the ability to alloy and controllably dope the material both n and p type. In this paper we present Raman and magneto transport studies on β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 grown by MBE. By comparing the spectra obtained for undoped and doped samples we provide a general overview of the effects of doping on the crystallinity of the material. The temperature dependent (4K<T<300K) magneto transport illustrates that Cr is a p-type dopant and Co is an n-type dopant in β-FeSi2.The temperature dependence of the resistivity indicates that the transport properties at higher temperatures are determined by free carriers whereas at lower temperatures impurity band conduction prevails.
Email your librarian or administrator to recommend adding this to your organisation's collection.