The thermal stability of fluorinated SiO2 films (SiOF) was found to be dependent on F content and the type of substrate upon which the film was deposited. SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance (ECR) plasma upon Si, Al/Si, TiN/Al/Si, and Al/SiO2/Si substrates. Following deposition, the films were deliberately hydrated and/or annealed and their stability assessed. Hydration was found to only affect the high F content films. Capacitance changes with annealing in the high F content films were found to occur beginning at 200°C. These changes, which were independent of substrate type, likely occurred due to desorption of H2O in the films. After annealing of the high F content films up to 400°C, a reduction in F content was found for SiOF films on some substrates. Significant reductions were found for SiOF films on Al/Si substrates, while little or no change was found for films on TiN/Al/Si, Al/SiO2/Si, or Si substrates. Local chemical analysis of those films which showed F reduction indicated that the F profile was approximately uniform throughout the layer and did not pile-up at the interface. The substrate-dependent thermal instability exhibited by these films suggests the chemical nature or qualities of the substrate may play a role in the F reduction reaction.