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2 results

Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates
J.F.H. Nicholls, H. Gallagher, B. Henderson, C. Trager-cowan, P.G. Middleton, K.P. O'Donnell, T.S. Cheng, C.T. Foxon, B.H.T. Chai
Journal: MRS Online Proceedings Library Archive / Volume 395 / 1995
Published online by Cambridge University Press: 21 February 2011, 535
Print publication: 1995
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In this paper we demonstrate the feasibility of growing III-N semiconductors on novel lattice-matched oxide substrates. Although the growth parameters are not yet optimal, acceptable GaN layers have been grown.

Electron channeling patterns of a-axis and c-axis YBa2Cu3O7−δ thin films
K.H. Young, J.Z. Sun, D. Kapolnek, E.J. Tarsa, A. Inam, B.H.T. Chai
Journal: Journal of Materials Research / Volume 6 / Issue 12 / December 1991
Published online by Cambridge University Press: 31 January 2011, pp. 2501-2506
Print publication: December 1991
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We have studied the electron channeling patterns (ECPs) of both pure a-axis and pure c-axis epitaxial YBa2Cu3O7−δ thin films on various substrates. ECPs from three representative a-axis films [on PrBa2Cu3O7−δ buffered LaAlO3 (001), MgO (001), and SrLaAlO4 (001)] and three c-axis films [on LaAlO3 (001), NdGaO3 (001), and SrTiO3 (001)] are presented. The differences between both sets of ECPs are discussed and recorded as references for future identifications.