Rapid progresses are achieved in catalytic CVD (Cat-CVD), often called hot-wire CVD, in the past 3-years NEDO national project in Japan. Cat-CVD technology presents many advantages in thin-film formation processes; high-efficiency of gas use, large-area deposition, no ion bombardment and low-temperature deposition even below 200°C. All of the elemental techniques for the industrially applicable Cat-CVD apparatuses, such as the suppression of the metal contamination, the precise control of the substrate temperature, the life extension of the catalyzer, 1-m size uniform deposition and the chamber cleaning, have been completely developed. Sophisticatedly designed substrate holder with electrostatic chuck and showerhead equipped with catalyzers are both key technologies for these achievements. High reproducibility for film properties is also obtained by controlling the reaction between high-density radicals and chamber walls. Prototype mass-production apparatus for SiNx passivation films in GaAs devices has been already developed and this will be probably the first application of Cat-CVD in industry. These recent movements appear to promise the drastic revolution in semiconductor and flat-panel display industries by introducing Cat-CVD in very near future.