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1 results

  • Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

  • William Kerr, Valeria Gabriela Stoleru, Anup Pancholi
  • Journal:
    MRS Online Proceedings Library Archive / Volume 935 / 2006
    Published online by Cambridge University Press:
    01 February 2011, 0935-K04-06
    Print publication:
    2006

  • We investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.