Titanium nitride (TiN) films serve an important function as an adhesion layer and diffusion barrier in contact and via plug structures of ULSI devices. In this work, TiN films were deposited by chemical vapor deposition (CVD) at atmospheric pressure using the tetrakis (dimethylamido) titanium (TDMAT) and tetrakis (diethylamido) titanium (TDEAT) organic precursors over a range of temperatures and ammonia partial pressures. The step coverage and morphology of these films was evaluated at these various conditions by SEM of cross-sectioned contacts. In addition, material properties such as resistivity. surface roughness, and stoichiometry were assessed at some of the operating conditions.