We examine the Holocene loess record in the Heye Catchment on the margins of the Tibetan Plateau (TP) and China Loess Plateau (CLP) to determine: the region to which the Heye Catchment climate is more similar; temporal change in wind strength; and modification of the loess record by mass wasting and human activity. Luminescence and radiocarbon dating demonstrate loess deposited in two periods: >11–8.6 ka and <5.1 ka. The 8.6–5.1 ka depositional hiatus, which coincides with the Mid-Holocene Climatic Optimum, is more similar to the loess deposition cessation in the TP than to the loess deposition deceleration in the CLP. Grain-size analysis suggests the Heye loess is a mixture of at least three different grain-size distributions and that it may derive from multiple sources. A greater proportion of coarse sediments in the older loess may indicate stronger winds compared with the more recent depositional period. Gravel incorporated into younger loess most likely comes from bedrock exposed in slump scarps. Human occupation of the catchment, for which the earliest evidence is 3.4 ka, postdates the onset of slumping; thus the slumps may have created a livable environment for humans.

The effect of animal characteristics and placement decisions on retained ownership profitability of Tennessee cattle from 2005 to 2015 was determined using a mixed model regression. Ex post simulation analysis examined retained ownership profitability by placement season under different animal characteristic and corn price scenarios. Regression results indicate that placement weight, placement season, days on feed, animal health, and animal sex affect retained ownership profitability. Simulation results indicate that winter placement of cattle in feedlots had the highest expected retained ownership profits. Results provide risk-averse producers information regarding the profitability of retained ownership.

Chronic ICV administration of NGF stimulates the activity of the cholinergic neuronal markers, HACU and ChAT, as well as the evoked release of both endogenous and newly synthesized acetylcholine in the brain of aging Fischer 344 male rats. However, the pattern of cholinergic phenotype stimulation indicates an age-related differential regulation of ChAT, HACU, and ACh release between specific brain areas, with the largest.effects found in the striatum. NGF treatment also increases the effectiveness of neurotransmission between basal forebrain cholinergic neurons and postsynaptic amygdaloid target neurons. The stimulation of central cholinergic transmitter function after NGF treatment affects behavior in a Y-maze brightness discrimination paradigm. NGF treatment does not affect the cognitive measure of brightness discrimination, but reduces the number of avoidance attempts, a measure of motor function.

The cognitive profile of early onset Parkinson’s disease (EOPD) has not been clearly defined. Mutations in the parkin gene are the most common genetic risk factor for EOPD and may offer information about the neuropsychological pattern of performance in both symptomatic and asymptomatic mutation carriers. EOPD probands and their first-degree relatives who did not have Parkinson’s disease (PD) were genotyped for mutations in the parkin gene and administered a comprehensive neuropsychological battery. Performance was compared between EOPD probands with (N = 43) and without (N = 52) parkin mutations. The same neuropsychological battery was administered to 217 first-degree relatives to assess neuropsychological function in individuals who carry parkin mutations but do not have PD. No significant differences in neuropsychological test performance were found between parkin carrier and noncarrier probands. Performance also did not differ between EOPD noncarriers and carrier subgroups (i.e., heterozygotes, compound heterozygotes/homozygotes). Similarly, no differences were found among unaffected family members across genotypes. Mean neuropsychological test performance was within normal range in all probands and relatives. Carriers of parkin mutations, whether or not they have PD, do not perform differently on neuropsychological measures as compared to noncarriers. The cognitive functioning of parkin carriers over time warrants further study. (JINS, 2011, 17, 1–10)

We present the results of a systematic benchmarking study, using 45nm-groundrule structures, of a commercially-available ionized PVD Cu technology which employs an in-situ Ar+ radio-frequency (Rf) plasma capability for enhanced coverage, and compare its performance and extendibility against the same seedlayer process operated in conventional low-pressure mode. Studies of single-damascene lines and dual-damascene via structures indicate that the PVD Cu seedlayer with Rf-Plasma enhancement enables a reduction of the PVD Cu seed thickness on the order of 35%, based on studies of Cu voiding, via-yield degradation, and transmission-electron microscopy (TEM). These results illustrate the critical importance of the Rf-plasma resputter capability in extending the PVD Cu process to advanced groundrules at 45nm and beyond.

Silicon germanium pMOSFETs with channel lengths down to 0.4m have been fabricated on limited area silicon germanium virtual substrates. The devices have a 5nm thick Si0.3Ge0.7 active layer grown by MBE on top of relaxed Si0.7Ge0.3 virtual substrate. Virtual substrates were grown on top of 10μm square silicon pillars defined by etching trenches around their perimeter into the original silicon substrate. This limits the area of the growth zone, which in turn promotes the relaxation of the virtual substrate. Electrical measurements on 2μm long channel devices show that the maximum mobility in the strained SiGe devices is 211cm2V-1cm-1, compared to 104cm2V-1cm-1 for silicon reference devices. This increase in hole mobility increases the current drive of 0.4m devices measured at Vgt=-2V, Vds=-2.5V from 154μA/m to 192μA/μm.

Polycrystalline-Si1−xGex films have been formed by various methods on oxide-coated Si substrates at temperatures ≤600°C. Compared to thermal growth, plasma deposition of poly-Si1−xGex promotes smoother films with smaller grains having a {200}-dominated texture. Poly-Si1−xGex Alms formed by plasma deposition of amorphous-Si1-xGex followed by a crystallization anneal have an even smoother surface with grain sizes enhanced by an order of magnitude and a weak {111} grain texture. Hydrogen incorporated in amorphous-Si1−xGex evolves completely during crystallization without disrupting the smooth surface morphology. The largest grain sizes (∶1.3μm) are achieved in poly-Si1−xGex films formed by Si+ ion implantation for amorphization with a subsequent recrystallization anneal.