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Nanostructured quantum well and quantum dot solar cells are being widely
investigated as a means of extending infrared absorption and enhancing
photovoltaic device performance. In this work, we describe the impact of
nanostructured layer number on the performance of flexible, highvoltage
InGaAs/GaAs quantum well solar cells. Multiple quantum well structures are
observed to have a higher short circuit current but a lower open circuit voltage
than similar single quantum well structures. Analysis of the underlying dark
diode characteristics indicate that these highvoltage structures are limited by
radiative recombination at high bias levels. The results of this study suggest
that future development efforts should focus on maximizing the current
generating capability of a limited number of nanostructured layers and
minimizing recombination within the nanostructured absorber.
High performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials . In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.
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