We report on epitaxial growth of ZnO on polycrystalline and (112) orientated CuInS2 and CuInSe2 thin films. Step-by-step growth and investigation by photoelectron spectroscopy (PES) and low energy electron diffraction (LEED) provided information on the growth mode and the electronic structure of the ZnO-CuInS2-interface. During the initial growth no ZnO is deposited. Instead a monolayer of ZnS is formed by depletion the CuInS2 surface of excess sulfur. Thereafter, the ZnO growth starts on the ZnS buffer layer. The band alignment derived from PES shows that the ZnS buffer layer is thin enough to provide a beneficial band alignment for photovoltaic applications. CuInSe2 (112) samples showed a similar behaviour, but at the chosen deposition temperature of 450°C only ZnSe growth is detected. At lower temperatures ZnO growth on top of ZnSe is observed. XPEEM experiments show an inhomogeneous interface.

The ongoing wave of radical religious protest confirms the need for an alternative to the rationalist approach that has come to dominate social movement research. At this moment, it seems promising to take another look at Weber’s sociology of religion: it offers a theory which (1) proposes an unfamiliar account of the relation between personal identity and political activism, (2) builds on this to explain the functioning of a specific type of social movements organization, and (3) thereby identifies mechanisms causing a dynamic of protest that cannot be reduced to a “rational” adaptation to an opportunity structure. These concepts can also elucidate the working of movements that are not explicitly religious in character.