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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 8-13
- Print publication:
- 2000
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- Article
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Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 14-19
- Print publication:
- 2000
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- Article
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- You have access
- HTML
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Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.3
- Print publication:
- 1999
-
- Article
- Export citation
Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.4
- Print publication:
- 1999
-
- Article
- Export citation