To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
For an interface to be considered thermodynamically stable, the phases in contact must be in equilibrium with each other (connected by a stable tie-line) and have negligible mutual solubility on the phase diagram. The stability of Co based magnetic tunnel junctions (MTJs), with Co/MxO1-x/Co structures (M = Al, Gd, Hf, La, Mg, Si, Ti, Ta, Y and Zr), were evaluated with regard to these two conditions. Specifically, low temperature ternary isothermal phase diagrams were calculated and evaluated for the Co–M–O systems. All of these systems have at least one oxide in equilibrium with Co and thus have at least one thermodynamically stable tunnel barrier candidate for use in Co based MTJs. In light of the assumptions made in this analysis, along with the uncertainty in applying bulk enthalpy data to thin films, the current evaluation of interfacial stability serves as a first step in identifying suitable stable tunneling barrier materials in MTJs for detailed study.
Extensive new data and modeling in the In-Ga-As system has allowed the authors to reexamine the phase equilibria between the melt and the epitaxial solid. A detailed thermodynamic model was constructed with the following improvements: (1) The solid-solid interaction parameters were based on InAs-GaAs miscibility gap data, and (2) liquid-bulk solid, as well as liquid-epitaxial solid, tie-lines were used. Comparison of tie- lines from epitaxial systems and bulk systems demonstrated that strain energy is not the dominant factor in equilibrium growth of epitaxial solid films of In1-xGaxAs on any Ill-V binary substrate. Both the “lattice- pulling” effect and the “substrate-orientation” effect were shown to be caused by different quaternary equilibria at the In1-xGaxAs/InP interface, and not by film-substrate strain.
Email your librarian or administrator to recommend adding this to your organisation's collection.