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We study the photocurrent from photoexcited charged carriers excited with lasers of energy both above and below the energy gap in CdS nanostructures. We observe non-linear photocurrents in CdS nanosheet devices in the metal-semiconductor-metal configuration with Schottky contacts for sub-band gap excitations. Analysis of two-photon absorption dominated photocurrents reveals a nonlinear coefficient of β = 2 cm/GW for these nanosheet devices, which is comparable to those of bulk CdS. We demonstrate the use of the photocurrent polarization measurements to determine the orientation of atoms in the nanosheet.
We demonstrate the newly developed technique Photomodulated Rayleigh Scattering spectroscopy in order to probe the electronic band structure of single semiconductor nanowires. We show that both the electronic transition energies and nanowire diameter can be measured simultaneously and with high accuracy in a single non-destructive measurement. We demonstrate our results for zincblende GaAs as well as wurtzite InP nanowires where we probed the band gaps and transition energies at both room and low temperatures. This technique should advance the study of optical properties of single nanowires as well as other types of nanostructures.
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