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The crystallization onset and the annealing thresholds have been nmeasured as a function of the absorbed energy density in ion implanted amorphous silicon irradiated with nanosecond Nd pulse. Thin amorphous layers (∼500 Å) require higher thresholds ccapared with thick (∼4000 Å) amorphous layers. This result can be explained in terms of balance between absorbed energy and heat flow. For a given thickness of the amorphous layer the thresholds depend on the absorption coefficient of the amorphous material. This last parameter has been varied frcm 104 to 102 CM−1 by low temperature (T<400°C) pre-treatment of the ion implanted sample. The observed drastic variations of both crystallizazion and annealing thresholds agree well with nunerical evaluation of heat flow.
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