The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HN03 and CH3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.