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The paper presents the first experimental results obtained by using
new gamma-quantum diagnostics for ion beam induced high energy density
matter. Registration of γ-quantum output from the region of
beam-target interaction with time resolution enables to pick-up
information on density evolution of the target even if the ionization
state of matter involved is unknown.
Below is the complete Reference citation for Hoffmann et al.
Hoffmann, D.H.H., Blazevic, A., Ni, P., Rosmej, O., Roth, M.,
Tahir, N., Tauschwitz, A., Udrea, S., Varentsov, D., Weyrich, K. &
Maron, Y. (2005). Present and future perspectives for high energy
density physics with intense heavy ion and laser beams. Laser Part.
The study of heavy ion stopping dynamics using associated K-shell
projectile and target radiation was the focus of the reported experiments.
Ar, Ca, Ti, and Ni projectile ions with the initial energies of 5.9 and
11.4 MeV/u were slowed down in quartz and arogels. Characteristic
radiation of projectiles and target atoms induced in close collisions was
registered. The variation of the projectile ion line Doppler shift due to
the ion deceleration measured along the ion beam trajectory was used to
determine the ion velocity dynamics. The dependence of the ion velocity on
the trajectory coordinate was measured over 70–90% of the ion beam
path with a spatial resolution of 50–70 μm. The choice of
SiO2 aerogel with low mean densities of 0.04–0.15
g/cm3 as a target material, made it possible to stretch the
ion stopping range by more than 20–50 times in comparison with solid
quartz. It allowed for resolving the dynamics of the ion stopping process.
Experimentally, it has been proven that the fine porous nano-structure of
aerogels does not affect the ion energy loss and charge state
distribution. The strong increase of the ion stopping range in aerogels
made it possible to resolve fast ion radiation dynamics. The analysis of
the projectile Kα-satellites structure allows supposing that ions
propagate in solid in highly exicted states. This can provide an
experimental explanation for so called gas-solid effect.
The article presents the results of the experimental research
on precision measurement of total stopping range and energy
deposition function of intermediate and heavy ion beams in cold
solid matter. The “thick target” method proves to
be appropriate for this purpose. Two types of detectors were
developed which provide an error of the total stopping range
measurement of less than 3% and of the beam energy deposition
function of about 7%. The experiments with 58Ni+26,
197Au+65, and 238U+72 ion
beams in the energy range 100–300 MeV/u were performed on
SIS-18 (Gesellschaft für Schwerionenforschung, Darmstadt)
in 1999–2001. The measured data on the total stopping
ranges for the above ion species in bulk and foiled Al and Cu
targets are presented. The investigation showed that there is
a noticeable discrepancy between the measured stopping ranges
and the theoretically predicted ones. Also, it was shown that
realistic ion energy deposition depends on the type of target
(bulk or foiled). Further investigation is necessary to clarify
The X-ray spectral distribution of swift heavy Ti and Ni ions
(11 MeV/u) observed inside aerogels (ρ = 0.1
g/cm3) and dense solids (quartz, ρ = 2.23
g/cm3) indicates a strong presence of simultaneous
3–5 charge states with one K-hole. We show that the
theoretical analysis can be split into two tasks: first, the
treatment of complex autoionizing states together with the
originating spectral distribution, and, second, a charge-state
distribution model. Involving the generalized line profile function
theory, we discuss attempts to couple charge-state distributions.
Cumulative thermal annealing (TA) changes the photoluminescence (PL) intensity in erbium-doped a-Si:H films prepared using DC magnetron sputtering of a composite Er-Si target at substrate temperature 200°C. The intensity of erbium-related 1.54 νm PL at 77 K is enhanced about 50 times after TA at 300°C for 15 min in nitrogen atmosphere. No erbium-related PL is observed after TA at T≤500°C. The TA process is discussed in terms of a model of partial structural rearrangement in an a-Si(Er):H amorphous network.
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