18 results
Key biological mechanisms involved in high-LET radiation therapies with a focus on DNA damage and repair
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- Expert Reviews in Molecular Medicine / Volume 24 / 2022
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- 31 March 2022, e15
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Effects of Stress-relieving AlN Interlayers in GaN-on-Si Grown by Plasma-assisted Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 1068 / 2008
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- 01 February 2011, 1068-C06-04
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- 2008
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High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 1068 / 2008
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- 01 February 2011, 1068-C06-08
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- 2008
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Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements
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- MRS Online Proceedings Library Archive / Volume 744 / 2002
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- 11 February 2011, M8.5
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- 2002
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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G3.44
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- 2000
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Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G3.47
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- 2000
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Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP HEMTs.
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- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 301
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- 1995
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Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets
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- MRS Online Proceedings Library Archive / Volume 379 / 1995
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- 15 February 2011, 345
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- 1995
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Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates
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- MRS Online Proceedings Library Archive / Volume 417 / 1995
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- 10 February 2011, 265
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- 1995
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Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates
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- MRS Online Proceedings Library Archive / Volume 340 / 1994
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- 22 February 2011, 59
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- 1994
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Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy
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- Journal of Materials Research / Volume 8 / Issue 8 / August 1993
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- 31 January 2011, pp. 1908-1921
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- August 1993
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Alloy clustering and defect structure in the molecular beam epitaxy of In0.53Ga0.47As on silicon
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- Journal of Materials Research / Volume 7 / Issue 8 / August 1992
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- 31 January 2011, pp. 2194-2204
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- August 1992
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Influence of The Growth Temperature on The Presence of Composition Inhomogeneities in In0.52Al0.48As Layers Grown by MBE on InP Substrates
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- MRS Online Proceedings Library Archive / Volume 263 / 1992
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- 25 February 2011, 101
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- 1992
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On the Origin of the Contrast Inhomogeneities Found on In0.52Al0.48As Layers Grown on InP Substrates At High Temperatures
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
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- 25 February 2011, 133
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- 1992
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Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature
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- MRS Online Proceedings Library Archive / Volume 240 / 1991
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- 26 February 2011, 189
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- 1991
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Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing
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- MRS Online Proceedings Library Archive / Volume 116 / 1988
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- 28 February 2011, 279
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- 1988
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Comprehensive Investigation of Traps in GaAs/A1GaAs Heterostructures and Superlattices by DLTS
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- MRS Online Proceedings Library Archive / Volume 144 / 1988
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- 26 February 2011, 151
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- 1988
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Observation of GaAs/Si Interface by Tem: Effect of Annealing on the Structure
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- MRS Online Proceedings Library Archive / Volume 102 / 1987
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- 26 February 2011, 51
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- 1987
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