Hydrogenated amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon films are indispensable materials for large area electronic devices like solar cells, image sensors and thin film transistors (TFTs). The interest of the µc-Si:H films arise from the fact that they combine the high optical absorption of a-Si:H and the electrical transport properties close to those of crystalline silicon. In this work we show the correlation between substrate deposition temperature, crystallinity and electrical properties of a-Si:H and µc-Si:H films. The films were prepared by a conventional PECVD (13.56 MHz) RF system from PH3/SiH4/H2 gas mixtures in the temperature range of 100 to 250°C. While phosphorus doped (n) a-Si:H are deposited yielding conductivity values no better than 10−2 S/cm, (n) µc-Si:H layers deposited at substrate temperature of 250°C show conductivity values higher than 101 S/cm, crystalline fraction up to 80% and Hall mobility of about 0.9 cm2. V−1.s−1. It was observed that a change in the dark conductivity behavior occurs around 140°C, with a large increase in the conductivity values. A corresponding increase is not seen in the average grain size and in the crystalline volume fraction, which shows an almost linear increase with the deposition temperature. This stronger influence of the temperature in the electrical characteristics of the µc-Si:H films may be related to the phosphorus activation, which occurs in higher degree at higher deposition temperatures. The correlation among Raman spectroscopy, Hall effect and AC conductivity measurements (frequency range 6 Hz to 13 MHz) shows that the crystalline phase dominates the electrical transport mechanism in µc-Si:H films. Preliminary results of AC measurements indicate that the electrical resistivity of each phase of this material can be determined.