The growth of ferroelectric lead zirconate titanate (PZT) films by rf-sputtering using facing targets is described. This study has focused on producing thin (<500 nm) PZT films on a wide range of substrates including magnesium oxide, spinel, alumina, silicon oxide, and the respective substrates coated with platinum. Deposition was from two opposed targets separated by 10–15 cm, with the substrate plane normal to the targets and outside the cylinder defined by the two targets. This geometry was chosen to obtain compositional uniformity and avoid ion bombardment effects. The deposition temperatures ranged from RT to 700 °C and the process gas was a mixture of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film composition, microstructure, and properties were evaluated using Rutherford backscattering spectroscopy (RBS), x-ray diffraction, optical and electron microscopy, and various electrical measurements. Optimization of process conditions is discussed in terms of phase purity, preferred orientation, and minimization of electrode interaction.