2 results
Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF13-10
- Print publication:
- 2005
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Experimental Analysis and a New Theoretical Model for Anomalously High Ideality Factors (n ≫ 2.0) in GaN-based p-n Junction Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y7.11
- Print publication:
- 2003
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- Article
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