2 results
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process
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- Journal:
- MRS Communications / Volume 8 / Issue 4 / December 2018
- Published online by Cambridge University Press:
- 17 September 2018, pp. 1387-1394
- Print publication:
- December 2018
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- Article
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Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 677 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, AA4.24
- Print publication:
- 2001
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- Article
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