2 results
Time-Resolved Photoluminescence Measurements of In0.15Ga0.85N/In0.015Ga0.985N Quantum Wells with Si-doped Barriers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G9.10
- Print publication:
- 2000
-
- Article
- Export citation
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e1
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation