2 results
Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E4.14
- Print publication:
- 2005
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- Article
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Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.25
- Print publication:
- 2004
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- Article
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