5 results
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process
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- Journal:
- MRS Communications / Volume 8 / Issue 4 / December 2018
- Published online by Cambridge University Press:
- 17 September 2018, pp. 1387-1394
- Print publication:
- December 2018
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Characterization of Localized Degradation in Reverse-Biased GaN HEMTs by Scanning Transmission Electron Microscopy and Electron Holography
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- Journal:
- Microscopy and Microanalysis / Volume 16 / Issue S2 / July 2010
- Published online by Cambridge University Press:
- 01 August 2010, pp. 800-801
- Print publication:
- July 2010
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Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 345-348
- Print publication:
- July 2004
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Material Requirements For All-Optical Devices:Nonlinear Properties of Poly-4BCMU
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- Journal:
- MRS Online Proceedings Library Archive / Volume 228 / 1991
- Published online by Cambridge University Press:
- 21 February 2011, 27
- Print publication:
- 1991
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New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces
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- Journal:
- MRS Online Proceedings Library Archive / Volume 148 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 103
- Print publication:
- 1989
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