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1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z7.2/T7.2
- Print publication:
- 2003
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High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 692 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, H1.10.1
- Print publication:
- 2001
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MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
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- Journal:
- MRS Online Proceedings Library Archive / Volume 571 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 109
- Print publication:
- 1999
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Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 571 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 299
- Print publication:
- 1999
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Mbe Growth, Structural and Optical Characterization of Inas/Ingaaias Self-Organized Quantum Dots
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- Journal:
- MRS Online Proceedings Library Archive / Volume 583 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 57
- Print publication:
- 1999
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