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Studies on Al–Mg solid solutions using electrical resistivityand microhardness measurements
Published online by Cambridge University Press: 15 August 1999
Abstract
Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for
this study. From the electrical resistivity measurements it is concluded that the
resistivity increment of Al–Mg alloys (in a solid solution state) is proportional to
the atomic fractional constituents (Mg and Al) as $\Delta\rho_{\rm
all}=64.66\ c(1-c)~\mu\Omegarm$ cm. In addition, both the temperature coefficient of
resistivity, αall and the relaxation time of the free electrons
τall in the alloys diminish with increasing the solute Mg concentration.
The increase of the scattering power, η, with increasing C is interpreted to be
due to the contribution of electron-impurity scattering. The percentage increase due
to electron-impurity scattering per one atomic percent Mg has been determined as
12.99%. The Debye temperature θ decreases as the Mg concentration increases.
The microhardness results showed that the solid solution hardening obeys the relation
ΔHVs = 135.5C0.778 MPa which is comparable to the theory of solid
solution hardening for all alloys; ΔHVs ≈ C0.5−0.67 MPa.
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- © EDP Sciences, 1999
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