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Studies on Al–Mg solid solutions using electrical resistivityand microhardness measurements
Published online by Cambridge University Press: 15 August 1999
Abstract
Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for this study. From the electrical resistivity measurements it is concluded that the resistivity increment of Al–Mg alloys (in a solid solution state) is proportional to the atomic fractional constituents (Mg and Al) as $\Delta\rho_{\rm all}=64.66\ c(1-c)~\mu\Omegarm$ cm. In addition, both the temperature coefficient of resistivity, αall and the relaxation time of the free electrons τall in the alloys diminish with increasing the solute Mg concentration. The increase of the scattering power, η, with increasing C is interpreted to be due to the contribution of electron-impurity scattering. The percentage increase due to electron-impurity scattering per one atomic percent Mg has been determined as 12.99%. The Debye temperature θ decreases as the Mg concentration increases. The microhardness results showed that the solid solution hardening obeys the relation ΔHVs = 135.5C0.778 MPa which is comparable to the theory of solid solution hardening for all alloys; ΔHVs ≈ C0.5−0.67 MPa.
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- © EDP Sciences, 1999
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