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Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

Published online by Cambridge University Press:  15 July 2004

A. Armigliato ,
R. Balboni  and
S. Frabboni
A. Armigliato
Affiliation:
CNR-IMM Sezione di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy
R. Balboni*
Affiliation:
CNR-IMM Sezione di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy
S. Frabboni
Affiliation:
INFM-National Research Centre-S3 and Dipartimento di Fisica, Universitá di Modena e Reggio Emilia, Via G. Campi 213/A, 41100 Modena, Italy
*
balboni@lamel.bo.cnr.it
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Abstract

The principles of the convergent beam electron diffraction technique, which is a point-to-point method for local strain analysis of thin crystals in the transmission electron microscope, are briefly outlined. The availability in modern instruments of scanning attachments coupled with high-angle annular dark-field detectors (STEM/HAADF) has recently enabled the automatic acquisition of diffraction patterns in a large number of points, selected by digitally rastering the probe in a two dimensional region of the sample. As the components of the strain tensor can be calculated at each point, 2D strain mapping has thus become possible. An example of application of the technique to deep sub-micron shallow-trench isolation structures in silicon is reported.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 49 - 54
Copyright
© EDP Sciences, 2004

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