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Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix

Published online by Cambridge University Press:  15 July 2004

J. A. García
Affiliation:
Universidad del País Vasco, Departamento de Física Aplicada II, Lejona, Vizcaya, Spain
R. Plugaru
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
B. Méndez*
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
J. Piqueras
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
T. J. Tate
Affiliation:
Department of Electrical and Electronic Engineering, Imperial College of Science and Technology, London, UK
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Abstract

The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O has been studied by photoluminescence (PL) and cathodoluminescence (CL) in the scanning electron microscope. Annealing in nitrogen causes the formation of oxide species and Er-Si complexes or precipitates as well as spectral changes in the visible and infrared ranges. The main CL emission takes place in the visible range while PL spectra reveal intense visible and infrared emission. CL spectra show blue-violet, or green, emission bands whose relative intensities depend on the post-implantation annealing temperature. The PL spectra show a blue-violet band with a series of lines in the violet region related to phonon assisted transitions as well as different emission bands in the range 1200–1500 nm. The influence of the annealing-induced structural changes on the observed spectra is discussed.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2004

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